vs-hfa08pb60pbf, VS-HFA08PB60-N3 www.vishay.com vishay semiconductors revision: 20-apr-16 1 document number: 94041 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 8 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? designed and qualified according to jedec ? -jesd 47 ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa08pb60... is a state of the art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 600 v and 8 a continuous current, the vs-hfa08pb60... is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred vs-hfa08pb60... is ideally suited for applications in power supp lies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-247ac modified (2 pins) i f(av) 8 a v r 600 v v f at i f 1.4 v t rr typ. 18 ns t j max. 150 c diode variation single die 1 2 3 to-247ac mo d i?e d base common cathode 1 3 cathode anode 2 available absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current i f t c = 100 c 8 a single pulse forward current i fsm 60 maximum repetitive forward current i frm 24 maximum power dissipation p d t c = 25 c 36 w t c = 100 c 14 operating junction and storage temperature range t j , t stg -55 to +150 c
vs-hfa08pb60pbf, VS-HFA08PB60-N3 www.vishay.com vishay semiconductors revision: 20-apr-16 2 document number: 94041 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 8.0 a see fig. 1 -1.41.7 i f = 16 a - 1.7 2.1 i f = 8.0 a, t j = 125 c - 1.4 1.7 maximum reverse ? leakage current i rm v r = v r rated see fig. 2 -0.35.0 a t j = 125 c, v r = 0.8 x v r rated - 100 500 junction capacitance c t v r = 200 v see fig. 3 - 10 25 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time ? see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 18 - ns t rr1 t j = 25 c i f = 8.0 a ? di f /dt = 200 a/s ? v r = 200 v -3755 t rr2 t j = 125 c - 55 90 peak recovery current ? see fig. 6 i rrm1 t j = 25 c - 3.5 5.0 a i rrm2 t j = 125 c - 4.5 8.0 reverse recovery charge ? see fig. 7 q rr1 t j = 25 c - 65 138 nc q rr2 t j = 125 c - 124 360 peak rate of fa ll of recovery ? current during t b ? see fig. 8 di (rec)m /dt1 t j = 25 c - 240 - a/s di (rec)m /dt2 t j = 125 c - 210 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, ? junction to case r ? jc --3.5 k/w thermal resistance, ? junction to ambient r ? ja typical socket mount - - 40 thermal resistance, ? case to heatsink r ? cs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247ac modified (jedec) hfa08pb60
vs-hfa08pb60pbf, VS-HFA08PB60-N3 www.vishay.com vishay semiconductors revision: 20-apr-16 3 document number: 94041 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 150 c t j = 125 c t j = 25 c 0.4 3.2 1.2 2.0 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.8 2.8 0.1 1.6 2.4 0.001 0.1 1 10 100 0 200 300 v r - reverse voltage (v) i r - reverse current (a) t j = 150 c t j = 125 c t j = 25 c 1000 400 600 0.01 100 500 10 100 1 10 100 1000 1 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
vs-hfa08pb60pbf, VS-HFA08PB60-N3 www.vishay.com vishay semiconductors revision: 20-apr-16 4 document number: 94041 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) fig. 9 - reverse recovery parameter test circuit 80 0 100 1000 di f /dt (a/s) t rr (ns) 20 v r = 200 v t j = 125 c t j = 25 c 60 40 i f = 16 a i f = 8 a i f = 4 a 20 16 0 100 1000 di f /dt (a/s) i rr (a) 8 i f = 16 a i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 4 12 500 300 100 1000 di f /dt (a/s) q rr (nc) i f = 16 a i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 100 200 0 400 10 000 1000 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) v r = 200 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a i f = 4 a 10 irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t
vs-hfa08pb60pbf, VS-HFA08PB60-N3 www.vishay.com vishay semiconductors revision: 20-apr-16 5 document number: 94041 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - reverse recovery waveform and definitions ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-hfa08pb60pbf 25 500 antistatic plastic tube VS-HFA08PB60-N3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95541 part marking information to-247ac modified pbf www.vishay.com/doc?95255 to-247ac modified -n3 www.vishay.com/doc?95442 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 1 - vishay semiconductors product 2 - hexfred ? family 3 - electron irradiated 4 - current rating (08 = 8a) 5 - pb = to-247ac modified device code 5 1 3 2 4 6 7 hf vs- a 08 pb 60 pbf 6 7 - voltage rating: (60 = 600 v) - environmental digit: pbf = lead (pb)-free and rohs-compliant -n3 = halogen-free, rohs-compliant, and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 21-apr-15 1 document number: 95541 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 - 50 mils l/f modified dimensions in millimeters and inches notes (1) dimensioning and tolerance per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c and q symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.35 0.020 0.053 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.17 1.37 0.046 0.054 e1 13.46 - 0.53 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 7.39 - 0.291 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) ? p (datum b) ? p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating 0.10 a c m m ? k b d m m
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